| 摘要 |
PURPOSE:To improve the connection accuracy between patterns and the arrangement accuracy by constituting the entire forming process out of a process of enlarging a pattern and forming it on a reticle, a process of reducing the pattern and transcribing it on a resist, and a process of patterning an absorber film. CONSTITUTION:A pattern is enlarged and formed on a reticle 5 by an electron beam exposer. It is inspected using a pattern defect tester, and the defects of the pattern data or the defects by the foreign matter occurring in manufacture of a reticle are detected and modified. The pattern on the reticle 5 is reduced and transcribed on a photoresist 4', by the reduction/transcription device using an ArF excimer laser, so as to form a desired resist pattern. Next, as an etching mask, the absorber film 3 such as W, Ta, etc., at the bed is selectively etched, thus an X-ray mask is completed. |
