| 摘要 |
<p>PURPOSE:To realize a thin film electric resistor by a method wherein it is made as an alloy having a higher electric resistance rate than a Ni-Cr system alloy or an Fe-Cr-Al system alloy. CONSTITUTION:A resistance layer (20) comprises an alloy Z1-xLx (x=0.15 to 0.60) of which composition elements are a 1B group element L and a platinic group element Z. Cu, Ag, or Au is adopted as the 1B group element L and Pd, or Pt is adopted as the platinic group element Z, respectively. When this resistance layer (20) is easy to be separated from a glass substrate (10), a 2-layer structure provided with an adhesive layer (15) composed of a 1B group element M between the glass substrate (10) and the resistance layer (20) is adopted. However, a thickness of the adhesive layer (15) is made 1/10 or less of that of the resistance layer (20). In order to realize a resistance rate with the high electric resistance rate, a scope of an atomic composition x of the 1B axis element L in the alloy Z1-xLx is 0.20 to 0.50.</p> |
