发明名称 |
SEMICONDUCTOR ELECTROMECHANICAL TRANSDUCER ELEMENT HAVING A P-N-P OR N-P-N AMPLIFYING JUNCTION INTEGRALLY ASSOCIATED WITH A STRAIN-SENSITIVE REGION |
摘要 |
A highly sensitive, stable output, electromechanical semiconductor transducer element is formed from a unitary body of a semiconductor material wherein three regions are formed to provide a strain-sensitive region and P-N junctions which can provide a high gain electrical output which is based on a piezoresistive effect produced in the strain-sensitive region which is amplified by the presence of P-N junctions.
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申请公布号 |
US3662234(A) |
申请公布日期 |
1972.05.09 |
申请号 |
USD3662234 |
申请日期 |
1970.10.30 |
申请人 |
TOYOTA CHUO KENKYUSHO:KK. |
发明人 |
KATSUYUKI ISHII |
分类号 |
H01L29/00;H01L29/84;(IPC1-7):H01L11/00;H01L15/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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