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发明名称
HIGH WITHSTAND VOLTAGE MOS TRANSISTOR AND MANUFACTURE THEREOF
摘要
申请公布号
JPH04215480(A)
申请公布日期
1992.08.06
申请号
JP19900410402
申请日期
1990.12.13
申请人
SONY CORP
发明人
OSHIKAWA YOSHIHIRO
分类号
H01L29/78
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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