| 摘要 |
The method for forming a protection film on a gate electrode (4A) to prevent a deterioration of a silicide layer (4) because of the exposure of the silicide layer upon the formation of a Si oxide spacer (9) comprises forming a first Si oxide film (6) on the upper and side wall of the gate electrode to form a lightly doped drain (LDD) region (10) to deposit a silicon nitride thin film (7) on the whole substrate, forming a second Si oxide film (8) on the film (7) to etch the film (8) anisotropically to form the spacer (9) on the sidewall of the electrode (4a), removing the film (6) and the exposed film (7), and ion-implanting impurities with high concentration into the substrate to diffuse the implanted impurities to form source and drain regions (11).
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