SEMICONDUCTOR MEMORY CIRCUIT DEVICE HAVING GATE ARRAY MEMORY CELLS,申请号EP19910103049-传众专利搜索

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发明名称	SEMICONDUCTOR MEMORY CIRCUIT DEVICE HAVING GATE ARRAY MEMORY CELLS
摘要
申请公布号	EP0444687(A3)	申请公布日期	1992.08.05
申请号	EP19910103049	申请日期	1991.02.28
申请人	KABUSHIKI KAISHA TOSHIBA;TOSHIBA MICRO-ELECTRONICS CORPORATION	发明人	HARA, HIROYUKI, C/O INTELLECTUAL PROPERTY DIV.;WATANABE, YOSHINORI, C/O INTELLECTUAL PROPERTY DIV
分类号	H01L27/118;G11C7/06;G11C8/16;G11C11/419;H01L21/82;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):G11C7/06	主分类号	H01L27/118
代理机构		代理人
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