SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PURPOSE:To speed up reading out by transmitting the information of memory cells to be selected of memory array to common data lines via one of plural sub-common data lines and sense amplifiers corresponding thereto. CONSTITUTION:The common data line pairs CDL1 to 4 of the memory array M-ARY 1 to 4 consisting of CMOSs are constituted of respectively 4 sets of the sub-common data line pairs. The sense amplifiers SA 1 to SA 4... consisting of bipolar transistors are connected to each of the sub-common data pairs. the information from the memory cell among the memory arrays M-ARYs 1 to 4 selected via MISFETs for switching are selected via the sense amplifier connected to the sub-common data lines in the reading out operation. The floating capacity of the sense amplifier input terminals is decreased in this way and the high-speed reading out is possible.