| 摘要 |
PURPOSE:To improve the characteristics of a polycrystalline silicon layer, such as mobility, off leakage, etc., even when the deposition temperature of a polycrystalline silicon layer is high and the characteristic of the layer is inferior by annealing the layer. CONSTITUTION:The deposition temperature of polycrystalline silicon is set at <=700 deg.C. As a result, the mobility of the silicon is improved and a characteristic of nearly '10' is obtained especially in the vicinity of 500 deg.C. In addition, the improvement in off leakage depends upon the manufacturing method of a gate film formed by thermally oxidizing the polycrystalline silicon and a dry oxidation method at a high temperature yields the best result. Moreover, the mobility and off leakage of the polycrystalline silicon layer can be improved when the layer is annealed with a laser beam even when the deposition temperature of the layer is high. |
