| 摘要 |
PURPOSE: To provide a method for manufacturing a photoelectric amplifier device including passive waveguides and integrated optical amplifier. CONSTITUTION: The method for manufacturing the optical amplifier forming the deposition of the following layers by epitaxy is disclosed. The structure consisting of a-waveguide layer (3),-chemical etching barrier layer (4),-waveguide layer (5),-chemical etching barrier layer (6),-active layer (7), localizing layer (8),-contact layer (9) and at least one of amplifier elements and optical waveguides arranged below these elements is etched in these layers. This method is applied to the manufacture of the photoelectric devices, such as changeover switches and distributors. |
