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发明名称
METHOD FOR IMPROVEMENT OF ELECTRICAL ERASURE CHARACTERISTIC OF FLOATING GATE MEMORY CELL
摘要
申请公布号
JPH04211176(A)
申请公布日期
1992.08.03
申请号
JP19910011706
申请日期
1991.01.09
申请人
INTEL CORP
发明人
SUTEFUAN KEIISHII RAI
分类号
H01L21/8247;H01L21/28;H01L21/336;H01L27/115;H01L29/788;H01L29/792
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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