High purity conductive films and their use in semiconductors.,申请号EP19920300634-传众专利搜索

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发明名称	High purity conductive films and their use in semiconductors.
摘要	<p>A high purity contact barrier layer in a semiconductor device is characterized by an A1 content of 1 x 10<1><8>cm<-><3> or less. <IMAGE></p>
申请公布号	EP0496637(A2)	申请公布日期	1992.07.29
申请号	EP19920300634	申请日期	1992.01.24
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	ISHIGAMI, TAKASHI;SATOU, MICHIO;OBATA, MINORU;MIYAUCHI, MASAMI;KAWAI, MITUO;YAMANOBE, TAKASHI;YAGI, NORIAKI;MAKI, TOSHIHIRO;ANDO, SHIGERU;KOHANAWA, YOSHIKO
分类号	H01L29/47	主分类号	H01L29/47
代理机构		代理人
主权项
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