| 摘要 |
1. A contact node comprising at least two metallized contacts connected to electroconductive tracks provided on the surfaces of the switching layers made on a base of a dielectric material, alinged with each other and are electrically and mechanically connected together by an electroconductive binding material, characterized in that the contact node is made in the form of a splice between a contact made in the form of a metallized contact pad connected to the to electroconductive tracks provided on the surface of a switching layer and aligned with it a counterpart contact made in the form of metallized opening in a superstratum switching layer, wherein the bottom edge of the metallized opening faces a metallized contact pad on the surface of an underlying switching layer, and its upper edge is connected to the electroconductive tracks provided on the upper surface of the superstratum switching layer. 2. The contact node of claim 1, characterized in that the metallized opening is made in the form of a cylinder. 3. The contact node of claim 2, characterized in that the upper edge of the metallized opening connected to the the electroconductive tracks provided on the surface of the switching layer is made with metallized rims along the edge periphery. 4. The contact node of claim 1, characterized in that the metallized opening shaped as truncated cone, wherein a lesser base of the truncated cones faces the contact pad provided on the surface of the underlying switching layer, and a bigger base of said truncated cones is connected to the electroconductive tracks on the upper surface of the superstratum switching layer. 5. The contact node of claim 4, characterized in that the upper edge of the metallized opening connected to the the electroconductive tracks provided on the surface of the switching layer is made with metallized rims along the edge periphery. 6. The contact node of claim 1, characterized in that an IC crystal oriented by the metallized contact pads to the corresponding metallized openings provided on the superstratum switching layer is used as a switching layer with metallized contact pads, the counterpart metallized openings in the superstratum switching layer. 7. The contact node of claim 1, characterized in that the contact metallized pad is flat. 8. The contact node of claim 1 or 6, characterized in that a protrusion is formed in the center of the metallized contact pad counterpart to the metallized opening, said protrusion interacts with the counterpart metallized opening. 9. The contact node of claim 8, characterized in that the protrusion is made in the form of a cylinder. 10. The contact node of claim 8, characterized in that the protrusion is made in the form of a cone. 11. The contact node of claim 8, characterized in that the protrusion is made ball-shaped. 12. The contact node of claim 8, characterized in that the protrusion is made of electroconducting material. 13. The contact node of claim 8, characterized in that the protrusion is made of solder. 14. The contact node of claim 1, characterized in that a contact is inserted into the metallized opening, the contact is made in the form of a stem, fixed in the underlying switching layer, orthogonally to its surface. 15. The contact node of claim 14, characterized in that the stem is cylindrical. 16. The contact node of claim 14, characterized in that the stem is made in the form of polyhedron. 17. The contact node of claim 14, characterized in that grooves are provided along the stem generatrix. 18. The contact node of claim 17, characterized in that grooves are discontinuous. 19. The contact node of claim 14, characterized in that the stem is made of electroconductve material. 20. The contact node of claim 14, characterized in that the stem is made of electroinsulation material with elecrtoconductive coating. 21. The contact node of claim 5, characterized in that the diameter D of the bigger base of a truncated cone, the width h of the metallized rim, the diameter d of a lesser base of a truncated cone, the thickness t of a dielectric material of a switching layer and the minimum width L of counterpart contact pad on the underlying switching layer represent the ratio: L ( or = D + 2h = d + 2t + 2h 22. The contact node of claim 14, characterized in that the upper edge of the metallized opening connected to the electroconductive tracks, and the lower edge of the metallized opening are made with metallized rims along the edges periphery. 23. The contact node of claim 3, characterized in that the upper and lower edges of the metallized opening have a bevel. |
