发明名称 SEMICONDUCTOR DYNAMIC RAM
摘要 PURPOSE:To reduce the noise of an aluminium power conductor by a method wherein in a two layer aluminium process semiconductor device having a power- supply voltage conductor and a GND conductor, the power-supply voltage conductor is twisted. CONSTITUTION:A power-supply voltage conductor Vcc conductor 1 and a GND conductor Vss conductor 2 are made to twist and the noise of an aluminium power conductor is reduced utilizing the coupling of a Vcc-Vss parasitic capacitance which is formed at the time of this twist.
申请公布号 JPH04206867(A) 申请公布日期 1992.07.28
申请号 JP19900337442 申请日期 1990.11.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 OSHIKOSHI KIYOOMI
分类号 H01L21/3205;H01L21/8242;H01L23/52;H01L27/10;H01L27/108 主分类号 H01L21/3205
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