| 摘要 |
The present invention concerns a magnetroesistive sensor. In this sensor, the sensitive element is constituted by a monocrystalline magnetic metallic multilayer formed of a stack of layers of a magnetic material separated by layers of a non-magnetic material, the multilayer being constructed in such a way that the layers of magnetic material have antiferromagnetic type coupling and that of the transition between the antiparallel aligned state and the parallel aligned state occurs in a very short interval of the magnetic field.
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