| 摘要 |
<p>PURPOSE:To make possible a high-accuracy cleavage by a method wherein the parts of regions, which are cleaved, of a semiconductor substrate are partially formed thin and thereafter, flaws are formed to cleave the substrate. CONSTITUTION:The end parts of anode electrodes 4 of semiconductor laser parts 21, which are formed on the surface of a wafer 20, are respectively formed as a narrow electrode part 13 and grooves 27 for stress concentration use are respectively formed in step parts 26 of the electrode parts 13 into a V-shaped form. Flaws 23 for cleavage use are respectively provided on one side of a cleavage line 22 to pass through the intermediate point of each electrode 13. After the wafer in this state is held between a tape for fixing use and a cover tape, a blade is struck on parts, which correspond to the flaws, of the rear of the wafer and a cleavage is performed. Thereby, a high-accuracy cleavage can be conducted and the yield of a semiconductor chip is improved.</p> |
