发明名称 |
Low threshold BiCMOS circuit |
摘要 |
A BiCMOS NAND circuit is disclosed employing low threshold n-channel FET transistors in conjunction with standard threshold n-channel FET transistors and standard threshold p-channel FET transistors. Circuit performance is maintained as the circuit devices are scaled to physically smaller FET devices and reduced power supply voltage. Furthermore, the circuit is interface compatible with standard CMOS circuits.
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申请公布号 |
US5132567(A) |
申请公布日期 |
1992.07.21 |
申请号 |
US19910687341 |
申请日期 |
1991.04.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PURI, YOGI K.;SCHULZ, RAYMOND A. |
分类号 |
H03K19/08;H03K19/00;H03K19/0944 |
主分类号 |
H03K19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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