| 摘要 |
<p>A method of aligning a mask and a wafer is disclosed, wherein the method includes a step for providing the mask with first and second patterns each having an optical power and providing the wafer with first and second marks each having an optical power, wherein the first pattern and the first mark are cooperable with each other to produce, in response to irradiation of a radiation beam, a first beam which is displaceable at a first magnification with a positional deviation of the wafer with respect to the mask, and wherein the second pattern and the second mark are cooperable with each other to produce, in response to irradiation of a radiation beam, a second beam which is displaceable at a second magnification, larger than the first magnification, with a positional deviation of the wafer with respect to the mask; a first detecting step for projecting a radiation beam to the mask, whereby the first beam is produced through cooperation of the first pattern and the first mark, and for detecting a positional deviation of the wafer with respect to the mask on the basis of the first beam; a first aligning step for preparatively aligning the wafer with the mask in accordance with the detection by the first detecting step; a second detecting step for projecting, after the first aligning step, a radiation beam to the mask whereby the second beam is produced through cooperation of the second pattern and the second mark, and for detecting a residual positional deviation of the wafer with respect to the mask on the basis of the second beam; and a second aligning step for precisely aligning the wafer with the mask in accordance with the detection by the second detection step.</p> |
