| 摘要 |
PURPOSE:To form fine ohmic electrodes by a method wherein a thin film comprising a metallic oxide ohmic to a conductor is irradiated with short wavelength laser beams in a reducing atmosphere so as to directly reduce the metallic oxide on the irradiated parts to the metal. CONSTITUTION:A TiO2 film 5 having high reflection preventive effect comprising silicon and ohmic metal is formed using normal pressure CVD device on the surface of a p-type silicon substrate 2 after the formation of an n<+> diffused layer 1. Next, a p<+> layer 3 to be a BSF layer and a rear electrode 4 are formed on the rear surface. In such a constitution, the element 6 comprising said components 1-5 is held on the X-Y stage of a short wavelength laser device; the prospective positions of electrode formation are irradiated with XeCl excimer laser beams so that the TiO2 on the laser beam irradiated parts may be reduced to Ti so as to form ohmic electrodes 7. |
