| 摘要 |
PURPOSE:To eliminate the mounting step for manufacturing a highly reliable sensor with high precision by a method wherein a cantilever and the spaces encircling the catilever are formed using the thin film technology on the surface of a silicon substrate so that the cantilever and the spaces may be integrated to form the title acceleration sensor. CONSTITUTION:The title semiconductor acceleration sensor is a capacitance type sensor composed of two capacitors comprising a p<+> silicon region 11 and a polycrystalline silicon layer 12 formed above and beneath a cantilever 10 used as a common electrode respectively through the intermediary of the first silicon film 13 and the second silicon nitride film 14. This p<+> silicon region 11 is formed on the surface of an n-type silicon substrate 16. When this sensor is accelerated, the cantilever 10 approaches to the p<+> silicon region 11 so that the capacitance between the cantilever 10 and the P<+> silicon layer 11 may be increased while the capacitance between the cantilever 10 and the polycrystalline silicon layer 12 may be decreased. In such a constitution, the acceleration can be measured by measuring the fluctuation in the capacitance. |
