发明名称 |
Integrated structure of a bipolar power transistor and a low voltage bipolar transistor in the emitter switching or semibridge configurations and associated manufacturing processes. |
摘要 |
<p>In the version with unisolated components the components of the structure are totally or partially superimposed on each other, partly in a first epitaxial layer and partly in a second epitaxial layer; the low voltage bipolar transistor is indeed situated above the emitter region of the bipolar power transistor which is thus a completely buried active structure. In the version with isolated components, in an n- epitaxial layer there are two p+ regions, i.e. the first, constituting the power transistor base, encloses the n+ emitter region of said transistor while the second encloses two n+ regions and one p+ region constituting the collector, emitter and base regions respectively of the low voltage transistor. A metallization on the front of the chip provides connection between the collector contact of the low voltage transistor and the emitter contact of the power transistor. <IMAGE></p> |
申请公布号 |
EP0493854(A1) |
申请公布日期 |
1992.07.08 |
申请号 |
EP19910203337 |
申请日期 |
1991.12.18 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L.;CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO |
发明人 |
PUZZOLO, SANTO;ZAMBRANO, RAFFAELE;PAPARO, MARIO |
分类号 |
H01L21/8249;H01L21/331;H01L21/8222;H01L27/06;H01L27/082;H01L29/73;H01L29/732 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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