| 摘要 |
PURPOSE:To perform high integration upon reduction in an area of an electric capacity memory cell by forming an amorphous high dielectric film having 100 or more of permittivity between two electrodes in the memory cell of a dynamic semiconductor memory. CONSTITUTION:When a lead zirco-titanate film is formed in a shape held between two electrodes vertically or laterally at a low temperature by an MOCVD method, a sputtering method or a coating glass method in an electric capacity memory cell of a dynamic semiconductor memory, an amorphous PZT film can be formed. The permittivity of the film becomes about 580, and permittivity equivalent to or more than 200-450 of permittivity of a crystallized PZT film is obtained. An insulating breakdown strength is high with the same permittivity, a leakage current is reduced, the thickness of the film can be reduced that much, and further electric capacity can be enhanced. A material which is normally called 'ferroelectric ceramic material' is formed in an amorphous film thereby to obtain high permittivity of the same degree as that of ferroelectric ceramics, its insulating breakdown strength is improved, its leakage current is reduced, and hence thickness of one layer can be reduced, and electric capacity can be increased. |
