SEMICONDUCTOR NONVOLATILE MEMORY DEVICE

摘要

PURPOSE:To make it possible to reduce the fatigue of silicon oxide and enhance the reliability of a semiconductor non-volatile memory device by forming an oxide superconductor on a part of an insulation film which faces a first polycrystalline silicon layer. CONSTITUTION:On a channel region is formed a first polycrystalline silicon layer 4 by way of a first silicon oxide film 3 while a second polycrystalline silicon film 6 is formed on the first polysilicon film 4 by way of a first oxide superconductor 5. The first oxide superconductor 5 between the first polycrystalline silicon film 4 and the second polycrystalline silicon film 6 is formed by a substance having a composition of YBa2Cu2O7 and a critical temperature of 90K.