MOS-circuit suitable for switched memories - comprises transistor with source, drain and front and back gates

摘要

The MOS-circuit comprises an MOS-transistor (2) with source (4), drain (5), and front (3) and back gates. Also included is a circuit element with gate-controlled channel, one end of which is connected by a semiconductor to that of the transistor. The source or drain can be connected via a conductor to the element channel end not connected to the transistor channel. The second element gate is connected to that of a subsequent MOS-transistor.