| 摘要 |
<p>PURPOSE:To form the high-quality display device on a low-cost substrate by having amorphous silicon thin-film transistors for an active matrix and polycrystalline silicon thin-film transistors for peripheral driving circuits on a heat resistant plastic film. CONSTITUTION:Gate electrode parts 2 of the active matrix part are formed on the polyimide film 1 and insulating films 3, 3' are formed. The active matrix has the function as the gate substrate film 3 and the peripheral driving part as the underlying protective film 3'. After the a-Si film 4 is formed, an oxide film 5 is selectively formed in the peripheral driving part alone and n<+> contact holes 6 are formed. The n<+> of this time functions as gate electrode parts 6' and after the gate electrodes 6' and gate oxide film 5 are etched only in the peripheral driving part, impurity diffusion and activation are executed by a laser or plasma. The high-quality display device is formed on the low-cost substrate in this way.</p> |
