发明名称 Manufacturing method and equipment of single silicon crystal
摘要 According to the present invention, the inside of a crucible in which a molten raw material is placed is partitioned off with a partition ring so that a pulled single crystal is surrounded and the molten raw material may be moved and granular silicon is supplied to the outside of the partition ring, thereby to form the whole surface of outside molten liquid as a granular silicon soluble region so as to maintain the molten liquid surface on the inside of the partition ring at almost a constant level, and also to set the temperature of the molten liquid on the outside of the partition ring higher than the temperature of the inside thereof at least by 10 DEG C. or higher by covering the partition ring and the molten liquid surface on the outside thereof with a heat keeping board.
申请公布号 US5126114(A) 申请公布日期 1992.06.30
申请号 US19900460563 申请日期 1990.01.03
申请人 NKK CORPORATION 发明人 KAMIO, HIROSHI;ARAKI, KENJI;SHIMA, YOSHINOBU;SUZUKI, MAKOTO;KAZAMA, AKIRA;HORIE, SHIGETAKE;NAKAHAMA, YASUMITSU
分类号 H01L21/18;C30B15/02;C30B15/12;C30B15/14;H01L21/208 主分类号 H01L21/18
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