| 摘要 |
For use, e.g., as a fast acting microminiature optical switch, modulator, or oscillator in integrated optics, a device is provided with a light-sensitive element (12-20) whose electrical state can be influenced optically. The element (12-20) includes electrically biased semiconductor layers (15-17) which form a resonant-tunneling structure, and the electrical state is switched by radiation (23, 25) having quantum-well bandgap energy. The change in electrical state is accompanied by a change in opacity or refractive index, permitting optical read-out (24, 26).
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