ELECTROLUMINESCENT SILICON DEVICE

摘要

An electroluminescent silicon device comprises a light emitting diode. The diodeincludes a p+ semiconductor contact and a n- layer, forming a p-n junction therebetween. The n- layer is carbon-doped and irradiated with an electron beam having electrons with energies of between 150 and 400 keV to form G-centres. The diode is electroluminescent when forward biassed, radiative recombination occurring at the G-centres. The invention reconciles the conflicting requirements of creating luminescent defect centres by irradiation while avoiding damage to electronic properties. The device may be an integrated light emitting diode incorporated in a CMOS microcircuit. Photon output from the diode may be relayed to other parts of a CMOS microcircuit by an integrated waveguide.