发明名称 Preparation of group IIIA-VA compounds such as boron nitride, and of boron nitride films and coatings
摘要 Lewis base-borane complexes such as (CH3)2S.BHBr2 are utilized as molecular precursors for the formation of both bulk powders, films and coatings of boron nitride. The complexes are subjected to slow heating under an ammonia atmosphere to displace the base and pyrolyze the resulting complex to BN. Analogous processes may be used to prepare Group IIIA-VA compounds of the formula MM' where M is selected from the group consisting of B, Al, Ga, In, and Tl, and M' is selected from the group consisting of N, P, As, Sb and Bi.
申请公布号 US5126168(A) 申请公布日期 1992.06.30
申请号 US19890304959 申请日期 1989.02.01
申请人 THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA 发明人 SNEDDON, LARRY G.;BECK, JEFFREY
分类号 C04B35/583;C04B41/45;C04B41/81;C23C16/34;C30B25/02 主分类号 C04B35/583
代理机构 代理人
主权项
地址