| 摘要 |
<p>PURPOSE:To obtain a capacitor in the pad without the formation of an extra capacitive region in the semiconductor section by adopting a multi-layer structure for the I/O pad that connects the inner portion of a semiconductor with the exterior, separating the lower and upper layers, and using the lower and upper layers as capacitor electrodes. CONSTITUTION:An insulation film 4 is placed on top of a 1st aluminum electrode 5 and then a 2nd aluminum electrode 3 is formed. Both the 1st and 2nd electrodes 5, 3 are made to be capacitor electrodes. The capacitance is determined by 4 factors, including the surface area S2 of the 2nd aluminum 3, the thickness tox of the insulation film 4, the surface area S1 of the 1st aluminum 5, and the dielectric constant of the insulation foil 4. As a result, it is possible for a signal element to function as the I/O pad and capacitor electrode.</p> |
