| 摘要 |
PURPOSE:To increase the freedom of parameters of structural design, and obtain the optimum optical and electric characteristics, by adding fine particles composed of semiconductor material, in resin material. CONSTITUTION:A polyimide layer 8a contains high resistive GaAs fine particles whose diameters are about 0.2mum. By changing the volume ratio of polyimide and GaAs fine powder, the equivalent refractive index of the polyimide layer 8a can be freely changed between both refractive indexes. That is, since the refractive index Np of the polyimide layer 8a can be increased by increasing the mixing ratio of GaAs fine powder, the thickness (d) of an upper clad layer 4 can be decreased, and reactive current flowing out toward both sides of a stripe can be restrained. Thereby the freedom of structural parameters can be increased, and element characteristics can be easily optimized. |
