| 摘要 |
PURPOSE:To enable a capacitor to be easily enhanced in counter area by increasing a cylindrical part in height by a method wherein a high concentration polycrystalline silicon film is formed into a prescribed shape, a low concentration silicon film is formed covering the high concentration polycrystalline silicon film, and the low concentration silicon film is anisotropically etched. CONSTITUTION:A polycrystalline silicon film is made to grow, impurities such as phosphorus or the like is implanted into the silicon film high in concentration, and the polycrystalline silicon film is etched using a photoresist 9 as a mas, whereby a first N<+>-type capacitance storage electrode 10 is formed. Then, the photoresist 9 is separated off, a polycrystalline silicon film is grown on the surface, and impurities such as phosphorus or the like are implanted low in concentration to form a second N-type capacitance storage electrode 11. Then, an anisotropical etching process is carried out to fully remove the second N-type capacitance storage electrode 11 formed on the upside of the first N<+>-type capacitance storage electrode 10, then only a first capacitance storage electrode 10a is left unremoved, and only a second capacitance storage electrode 11a formed on the side face of the first N<+>-type capacitance storage electrode 10 is left unremoved. |
