| 摘要 |
A semiconductor device which includes a semiconductor substrate, an element region formed on one of the principal surfaces of the semiconductor substrate with multilayer wiring structure having an organic film as an interlayer insulating film, a plurality of electrically conductive pillars formed in the periphery of the element region on the principal surface of the substrate, an organic interlayer insulating film formed between the plurality of electrically conductive pillars, and bonding pads formed on the plurality of electrically conductive pillars and extending from the upper layer wiring of the element region.
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