| 摘要 |
PURPOSE:To facilitate increase of the storage capacity of a capacitor dielectric film by a method wherein solid phase reaction between Al and silicon is utilized in order to make the surface of a polycrystalline silicon film uneven. CONSTITUTION:An Al film 8 is formed on a polycrystalline silicon film 7 which is to be a storage electrode. The Al film 8 is subjected to a thermal treatment to have silicon melted into A and an unevenness is formed along the boundary between the Al film 8 and the polycrystalline silicon film 7. Then the Al film 8 is removed by etching and a dielectric film 9 is formed on the uneven polycrystalline silicon film 7 and, further, a polycrystalline silicon film 10 which is to be a cell plate is formed on the dielectric film 9. With this constitution, a capacitor having a storage electrode which has an enlarged effective area and is suitable for a batch treatment can be obtained. |
