| 摘要 |
PURPOSE:To prevent increase of a short-circuit current and reduction of an open voltage by providing an amorphous silicon germanium film having the protruding and recessed surface or the surface formed like an island in the vicinity of light incoming side within a i-type amorphous semiconductor film. CONSTITUTION:An amorphous silicon germanium film (a-SiGe) 3C having the protruded and recessed surface or an amorphous silicon germanium film (a-SiGe) 3C formed like an island is provided in the vicinity of the light incoming side in an i-type amorphous semiconductor film 3b. Multiple reflection is generated between the a-SiGe film 3C and a rear electrode 4 in the photovoltaic device and so-called light trapping effect can be obtained. Increase of light absorption is also carried out by using a-SiGe film 3C itself. Thereby, drop of open voltage due to the use of a-SiGe film can be prevented and improvement of a short- circuit current due to the light trapping effect can be realized. |
