| 摘要 |
A semiconductor device comprises first and second island regions of a first conductivity type formed closely to each other in the surface area of a semiconductor substrate, first-and second-channel type MOS FETs formed in the first island region, and a high impurity concentration region of the first conductivity type having an impurity concentration higher than the island regions and formed between the substrate and at least one of the first and second island regions, the high impurity concentration region being formed to surround the island regions.
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