| 发明名称 |
Graphoepitaxy using energy beams |
| 摘要 |
Improvements to graphoepitaxy include use of irradiation by electrons, ions or electromagnetic or acoustic radiation to induce or enhance the influence of artificial defects on crystallographic orientation; use of single defects; and use of a relief structure that includes facets at 70.5 and/or 109.5 degrees.
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| 申请公布号 |
US5122223(A) |
申请公布日期 |
1992.06.16 |
| 申请号 |
US19840680238 |
申请日期 |
1984.12.10 |
| 申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
GEIS, MICHAEL W.;FLANDERS, DALE C.;SMITH, HENRY I. |
| 分类号 |
C30B1/00;C30B1/08;C30B25/18 |
主分类号 |
C30B1/00 |
| 代理机构 |
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