Method of forming a highly insulative thin films

摘要

A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.