| 摘要 |
PURPOSE:To increase the storage capacity of a semiconductor device without making the manufacturing process of the device complicated by providing a process for forming the first electrode by patterning a polycrystalline silicon layer, process for forming a dielectric film on the first electrode, and process for forming the second electrode on the dielectric film. CONSTITUTION:Small recessing and projecting sections are formed on the surface of a polycrystalline silicon layer 13 by performing heat treatment to the surface of the layer 13 after ions are implanted into the surface by ionizing an inert gas. When, for example, the heat treatment is performed to the surface of the layer under a prescribed condition after inert atoms of argon, neon, krypton, etc., are implanted, small bubble-like recessing and projecting sections can be formed on the surface of the layer 13. When a dielectric film 15 is formed on the surface thereafter, the surface area of the film 15 is increased. Then the second electrode 16 is formed on the film 15. Therefore, the storage capacity of this semiconductor device can nearly be doubled. |
