| 摘要 |
An improved method for forming a patterned resist layer on a semiconductor body, after an energy radiation has been projected on a desired region of the resist layer, wherein a layer of negative-working resist on the semiconductor body is heated in an atmosphere which is free from any oxidizing gases, so that post-polymerization of said negative-working resist is substantially accomplished. The exposed and the post-polymerized negative-working resist is then developed. This method provides a high accuracy of the resulting resist patterns and constant thickness of the resist coating remaining in the exposed area after developing. It additionally provides an increased percentage of the thickness of the residual resist coating to the initial coating thickness. Further, it enables straight-line processing of the resists.
|
