| 摘要 |
PURPOSE:To monolithically form a semiconductor optical element by guiding both the TE mode light and the TM mode light in the upstream region from the branch point of the first wave guide path, guiding the TE mode light in the downstream region from the branch point of the first wave guide path, and guiding the TM mode light in the second wave guide path. CONSTITUTION:The first wave guide path 2 made of a mixed crystal semiconductor with the refraction factor smaller than the refraction factor of a substrate 1 is extended on a semiconductor substrate 1, and the second wave guide path 3 branched and stretched from the first wave guide path 2, made of a compound semiconductor super lattice containing the same component as the component of the mixed crystal, and having nearly the same height as the height of the first wave guide path 2 is extended. A clad layer 4 surrounding the second wave guide path 3 and the first wave guide path 2, made of the same super lattice as that of the second wave guide path 3 on the semiconductor substrate 1, and made of a layer lower than either the first wave guide path 2 or the second wave guide path 3 in height is extended. A semiconductor optical element can be monolithically formed. |
