发明名称 REASIN-SEALED TYPE SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To prevent a fault of short-circuit of adjacent metal thin wires due to the flow of the metal thin wires on the occasion of resin sealing, by forming an insulative film of a silicon nitride film, a silicon oxide film or polyimide resin all around an inside sealed body. CONSTITUTION:An inside sealed body has a structure of the whole surface being covered completely with an insulative film 10 formed of a plasma nitride film, and it is sealed with resin 6. Therefore a bonding pad electrode 4, the lateral side 9 of a chip and the surfaces of metal thin wires 5 are covered completely with the insulative film and a sufficient blocking haredening is produced for a contamination source located outside or in the resin. Since reinforcement is made by the insulative film 10, the bend strength of the metal thin wires 5 is improved sharply, and also mutual insulation is not lost even when the adjacent metal thin wires come into contact with each other.
申请公布号 JPH04158557(A) 申请公布日期 1992.06.01
申请号 JP19900285072 申请日期 1990.10.22
申请人 MATSUSHITA ELECTRON CORP 发明人 MAEDA YUKI
分类号 H01L23/29;H01L21/56;H01L23/31 主分类号 H01L23/29
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