| 摘要 |
PURPOSE:To enable an RBC effect to be generated at a low connector/emitter voltage and a low base/emitter voltage and obtain a method for manufacturing a semiconductor device in a structure for reducing power consumption by reduc ing the base/emitter voltage value generating an inverse base current in the base/emitter voltage versus base current characteristics by providing a high- concentration collector layer. CONSTITUTION:Ion is implanted into an N-type epitaxial layer 3 with a silicon nitride film 5 and an oxide film 4 remaining at an element-forming region as a mask 6. The N-type epitaxial layer 3 is subjected to thermal oxidation and a field oxide film 8 is formed. An N<+>-type high-concentration collector laver 9 is formed under the field oxide film 8. The mask 6 is eliminated bv etching and the N-tvre eritaxial layer 3 is subjected to thermal oxidation, thus forming a gate oxide film 10. Then, a gate electrode 11 and an Si02 film 12 are formed. Ion is implanted into the N-type epitaxial layer 3 at both sides with the gate electrode 11 as a mask, thus forming a base layer 13 and a source/drain layer 14. This semiconductor device generates RBC at a low collector/ emitter voltage and a low base/emitter voltage and allows collector current at this time to be smaller than before. |
