CHEMICAL VAPOR DEPOSITION METHOD OF HIGH QUALITY DIAMOND

摘要

PURPOSE:To obtain the title diamond by using either <12>C or <3>C in a reaction gas and by specifying the nitrogen concentration in said reaction gas. CONSTITUTION:Using as feedstock gas a methane gas with >=99.9% of the carbon atoms consisting of <12>C or <13>C and a nitrogen content of <=20ppm, a diamond thin film is synthesized through e.g. the microwave plasma CVD technique. This diamond thin film produced under such conditions will be >=99.9% in the purity of <12>C or <13>C and <= several ppm in nitrogen content. Because such a high-purity diamond film can be formed, the objective diamond with high thermal conductivity will be obtained.