| 摘要 |
PURPOSE:To improve the moldability, flexibility, lightweight quarity and mass productivity for the subject diode by a method wherein the P type acetylene high polymer having an excellent stability in oxidation is used. CONSTITUTION:On one side of the acetylene high polymer or the conductive acetylene high polymer obtained by doping an electron receptive compound on the acetylene high polymer, a metal such as tin or germanium is coated. As the electron receptive compound, iodine, bromine, halogen such as bromine iodide and the like, arsenic pentafluoride, a metal halogen compound such as antimony pentafluoride and the like, peroxide, an anhydride, an electron receptive organic compound and the like can be mentioned. |
