| 摘要 |
PURPOSE:To restrain a contamination and a defect from being produced in a gate oxide film and in a region directly under it and to enhance and stabilize an element characteristic and to enhance the yield of an element by a method wherein, after a gate insulating film has been formed, impurities are introduced from the upper part of the gate insulating film and a base region, a contact region and a source region are formed respectively. CONSTITUTION:At a MIS semiconductor device, a base region 6 of a second conductivity type is formed on the surface side of a semiconductor layer 1 of a first conductivity type, a source region 8 of the first conductivity type is formed inside the base region 6, a high-concentration contact region 3 of the second conductivity type is formed inside the base region 6 and from the surface side of a region in which the source region 8 is not formed, the surface side of the base region 6 between the semiconductor layer 1 and the source region 8 is used as a channel region, and a gate electrode 5 is formed on the surface of the channel region via a gate insulating film 41. In the manufacturing method of the MIS semiconductor device, said gate insulating film 41 is formed, impurities are then introduced from the upper part of the gate insulating film 41 and said base region 6, said contact region 3 and said source region 8 are formed respectively. Said MIS semiconductor device is used, e.g. as a vertical-type double-diffusion MOSFET. |
