| 摘要 |
PURPOSE:To obtain an inspection method which can evaluate, over a wide range, the lattice defect concentration of a material under test in a high-temperature state without causing irradiation damage to the material under test by a method wherein only a layer, to be radioactivated, which has been formed on the surface of the material under test is radioactivated to a short-life positron radiation source. CONSTITUTION:A layer 22 to be radioactivated is formed on the surface of a material 25 under test; a high-energy beam 21 is remote-irradiated; one part of the layer 22 to be radioactivated is radioactivated to a short-life positron radiation source RI by a nuclear reaction. Said layer 22 to be radioactivated and the material 25 under test are set to arbitrary surroundings; the energy spectrum of radiated extinction gammarays 28 when positrons 27 radiated from said positron radiation source are extinguished at reduced speed in the material 25 under test is measured; the defect concentration of the material 25 under test is remote-measured by means of the spread of the width of the energy spectrum. For example, polysilicon, as a layer to be radio- activated, which has been doped with <10>B is deposited on silicon as a material 25 under test; it is irradiated with <2>He<+2> as a high-energy beam 21: <13>N is generated as a radioactivated part 23. |
