发明名称 Integrated circuit with multi-layer semiconductor
摘要 The invention relates to an integrated circuit with multi-layer semiconductor, in which a plurality of electronic circuit regions are formed so as to be superimposed in three dimensions by the use of individual insulating regions. According to the invention, this integrated circuit is characterised in that it comprises: - a column-shaped semiconductor region (24) formed in order to pass through the insulating region (4) in order to electrically link the adjacent electronic circuit regions (1, 2) together; and - a control electrode (25, 26) provided in proximity to the column-shaped semiconductor region (24) within the insulating region (4) so as to control the electrical conductivity of the column-shaped semiconductor region (24) in response to a control signal applied to the control electrode (25, 26). <IMAGE>
申请公布号 FR2669468(A1) 申请公布日期 1992.05.22
申请号 FR19900014201 申请日期 1990.11.15
申请人 MITSUBISHI DENKI KK 发明人 TOSHIO KUMAMOTO;HIROYUKI KOUNO
分类号 H01L27/06;H01L29/786 主分类号 H01L27/06
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