发明名称 HIGH-FREQUENCY AND HIGH-POWER TRANSISTOR
摘要 PURPOSE:To uniformly operate transistor chips and prevent the breakage of the transistor chips by providing wires having different resistances connecting between the transistor chip and a MOS-C, the MOS-C and an internal lead, and the transistor chip and the internal lead, respectively. CONSTITUTION:Input to a transistor chip 1 is accomplished from an inner lead 2 through a large diameter wire 6 in wires 4, a MOS-C3 and the wire 6. Output to the internal lead 2 is accomplished from the transistor chip 1 through the large diameter wire 6 in the wires 4. At that time since the resistance value of central wire 4 is higher than that of the thick wire 6 on the outer side, current does not concentrate on a transistor chip 1 in the center. The material of wire may be changed to change the resistance values.
申请公布号 JPH04147635(A) 申请公布日期 1992.05.21
申请号 JP19900272653 申请日期 1990.10.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAGAWA KAZUHISA
分类号 H01L21/60;H01L23/50 主分类号 H01L21/60
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