| 摘要 |
PURPOSE:To make the deformation of a silicon substrate and to prevent the generation of an air bubble and peeling in subsequent glass film formation by forming a quartz-based glass film previously by a means for sputtering, etc., which does not heat the silicon substrate above 500 deg.C. CONSTITUTION:The quartz-based glass film 12 is formed on the silicon substrate 11 by the method which does not heat the substrate above 500 deg.C, e.g. sputtering, a gel-sol method, etc. Further, a buffer layer 13, a core part 14, and a clad layer 15 are formed by a flame depositing method and a reactive ion etching method. Therefore, when the film 12 is formed, the film never deforms by curving, etc., owing to the difference in coefficient of thermal expansion from the substrate 11 and when a glass particulate film is formed by the flame depositing method, the generation of an air bubble and peeling on the boundary surface between the both are prevented. |
