| 摘要 |
<p>A method of preventing corrosion of aluminum alloys is disclosed, which comprises the steps of coating an aluminum alloy layer on a semiconductor sbustrate, forming a resist pattern on an aluminum alloy layer, dry etching the aluminum alloy with the resist pattern used as a mask and aLso using a chlorine-based gas, and subsequently carrying out a plasma process using a blend gas containing oxygen (O2) and ammonia (NH3) and a subsequent process of removing the resist using oxygen plasma. Even where there is not only aluminum alloy but an outer or inner layer of TiN, TiW, etc. to be etched, corrosion of the aluminum alloy can be prevented without etching the outer or inner layer at all and also without etching an inner insulating layer at all. <IMAGE></p> |
